Recrystallization of thin amorphous silicon (a-Si) films can yield polysilicon (p-Si) material with functional properties suitable for fabrication of electronic devices, including high definition large area active matrix liquid crystal displays. Pulsed laser-effected melting and recrystallization is exceptionally effective since it avoids damage to the underlying insulator structure. The ensuing phase transformations and ultimately the quality of the produced p-Si material strongly depend on the temperature history. This article presents a review of research aiming to understand the complex nucleation, resolidification and crystal growth phenomena that evolve under severely non-equilibrium conditions. It is shown that elucidation of the fundamental thermodynamic processes enables conception of novel practical thin film crystal growth techniques.
Heat Transfer and Phase Transformations in Laser Annealing of Thin Si Films
Contributed by the Heat Transfer Division for publication in the JOURNAL OF HEAT TRANSFER. Manuscript received by the Heat Transfer Division October 10, 2001; revision received November 5, 2001. Editor: V. Dhir.
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Moon , S., Lee , M., and Grigoropoulos, C. P. (November 5, 2001). "Heat Transfer and Phase Transformations in Laser Annealing of Thin Si Films ." ASME. J. Heat Transfer. April 2002; 124(2): 253–264. https://doi.org/10.1115/1.1447941
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